Silica Wafers

Ultra-Flat Single-Side Polished (SSP) Silicon Wafers with Dry Oxides (i.e. Silica Wafers) in Stock:
 

  • Option A: ​
    Size: Four Inch 2''(50.8 mm); Thickness: 300 um+/- 10 um; Type: P/Boron-Doped; Orientation: <100>+/- 0.5°; Resistivity: 1 - 30 Ω·cm; 200 nm+/-10 nm Dry Oxide Layers on Both Sides​
  • Option B:
    Size: Four Inch 2''(50.8 mm); Thickness: 300 um+/- 10 um; Type: P/Boron-Doped; Orientation: <100>+/- 0.5°; Resistivity: 1 - 30 Ω·cm; 300 nm+/-10 nm Dry Oxide Layers on Both Sides​
  • Option C:
    Size: Four Inch 4''(100.0 mm); Thickness: 525 um+/- 10 um; Type: P/Boron-Doped; Orientation: <100>+/- 0.5°; Resistivity: 1 - 30 Ω·cm; 200 nm+/-10 nm Dry Oxide Layers on Both Sides
  • Option D:
    Size: Four Inch 4''(100.0 mm); Thickness: 500 um+/- 10 um; Type: P/Boron-Doped; Orientation: <100>+/- 0.5°; Resistivity: 1 - 30 Ω·cm; 300 nm+/-10 nm Dry Oxide Layers on Both Sides​ 
  • Option E:
    Size: Four Inch 6''(150.0 mm); Thickness: 650 um+/- 10 um; Type: P/Boron-Doped; Orientation: <100>+/- 0.5°; Resistivity: 1 - 30 Ω·cm; 200 nm+/-10 nm Dry Oxide Layers on Both Sides​
  • Option F:
    Size: 5.00 mm x 5.00 mm Diced Chips; Thickness: 525 um+/- 10 um; Type: P/Boron-Doped; Orientation: <100>+/- 0.5°; Resistivity: 1 - 30 Ω·cm; 200 nm+/-10 nm Dry Oxide Layers on Both Sides
     

Technical Processing Data:
 

  • Orientation: <100>+/- 0.5°;
  • TIR < 3 μm, TTV < 10 μm, BOW < 10 μm
  • Roughness < 0.5 nm;


Volume and Custom Orders Available Upon Request.
Please send your questions or concerns to info@alphananotechne.com
 

Silica Wafers

40,00C$Precio