Highly Doped Silicon Wafers

Ultra- Flat Highly Doped Silicon Wafers in Stock:
 

  • ​Option A:
    Size: Four Inch 4''(100.0 mm); Single-Side Polished, Thickness: 500 um+/- 10 um; Type: P/Boron-Doped; Orientation: <100>+/- 0.5°; Resistivity: 0.001 - 0.005 Ω·cm
  • Option B:
    Size: Four Inch 4''(100.0 mm); Double-Side Polished, Thickness: 300 um+/- 10 um; Type: N/Phosphorus-Doped; Orientation: <100>+/- 0.5°; Resistivity: 0.001 - 0.005 Ω·cm
     

Technical Processing Data:
 

  • Orientation: <100>+/- 0.5°;
  • TIR < 3 μm, TTV < 10 μm, BOW < 10 μm
  • Roughness < 0.5 nm;


Volume and Custom Orders Available Upon Request.
Please send your questions or concerns to info@alphananotechne.com
 

Highly Doped Silicon Wafers

42,00C$Precio